只用于动物实验研究等

General Information

Product Details

Chemical Structure

Chemical Structure of Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB); CAS No. 220797-16-0; Chemical Formula (C₅₁H₆₁N)_n.

Applications

Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10^-3 cm² V^-1 s^-1.

Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoO_x for example).

Device structure	ITO (120 nm)/PDOT:PSS(50 nm)/TFB (5 nm)/PYGTPA* (75 nm)/PEGPF* (10 nm)/Ca (10 nm)/Al (100 nm) [1]
Colour	Deep blue
Max. luminance	9,242 cd/m2
Max. Current Efficiency	0.85 cd/A
Bias	4.3 V

Device structure	ITO/c-ZnO (50 nm)/F8BT (80 nm)/MoO3 (10 nm)/Au (50 nm) [2]	ITO/c-ZnO (50 nm)/F8BT (80 nm)/TFB (60 nm)/MoO3 (10 nm)/Au (50 nm) [2]
Colour	Green	Green
Max. luminance	9,370 cd/m2	16,460 cd/m2
Max. Current Efficiency	0.34 cd/A	0.93 cd/A
Bias	~ 0.60 V	~ 0.87 V

Device structure	ITO/ZnO/CsPbI3/TFB (60 nm)/MoO3 (5 nm)/Ag (80 nm) [3]
Colour	Red
Max. Luminance	206 cd/m2
Max. EQE	5.7%

*For chemical structure informations please refer to the cited references

Literature and Reviews

1. All-solution-processed multilayer polymer/dendrimer light emitting diodes, M. Auer-Berger et al., Org. Electronics, 35, 164-170 (2016); http://dx.doi.org/10.1016/j.orgel.2016.04.044.
2. High Efficiency Composite Metal Oxide-Polymer Electroluminescent Devices: A Morphological and Material Based Investigation, D. Kabra et al., Adv. Mater., 20, 3447–3452 (2008); DOI: 10.1002/adma.200800202.
3. Highly Efficient Perovskite Nanocrystal Light-Emitting Diodes Enabled by a Universal Crosslinking Method, G. Li et al., adv. Mater., 28, 3528–3534 (2016); DOI: 10.1002/adma.201600064.
4. A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes, H. Yan et al., Appl. Phys. Lett., 84, 3873 (2004); doi: 10.1063/1.1737791.
5. Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes, J-S. Kim et al., Appl. Phys. Lett., 87, 023506 (2005); doi: 10.1063/1.1992658.